Thin-film semiconductor device and method for fabricating thin-film semiconductor device
US8907341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2012 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film semiconductor device includes a semiconductor device part and a capacitor part. The semiconductor device part includes: a light-transmitting first gate electrode; a light-shielding second gate electrode; a first insulating layer; a semiconductor layer; a second insulating layer; and a source electrode and a drain electrode. The capacitor part includes: a first capacitor electrode made of a light-transmitting conductive material; a dielectric layer; and a second capacitor electrode. The second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.