Insulated gate bipolar transistor
US8907374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Dec 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.