High electron mobility transistor with multiple channels
US8907378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A device includes a source and a drain for transmitting and receiving an electronic charge. The device also includes a first stack and a second stack for providing at least part of a conduction path between the source and the drain, wherein the first stack includes a first gallium nitride (GaN) layer of a first polarity, and the second stack includes a second gallium nitride (GaN) layer of the second polarity, and wherein the first polarity is different from the second polarity. At least one gate operatively connected to at least the first stack for controlling a conduction of the electronic charge, such that, during an operation of the device, the conduction path includes a first two-dimensional electron gas (2DEG) channel formed in the first GaN layer and a second 2DEG channel formed in the second GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.