Radiation tolerant dummy gate-assisted n-MOSFET, and method and apparatus for modeling channel of semiconductor device
US8907380B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/235
Abstract
The DGA n-MOSFET layout of the present invention can properly operate in a radioactive environment by blocking leakage current paths that may be created by radiation. Hence, the DGA n-MOSFET layout can be applied to design of electronic components operable in radioactive environments, such as outer space, planetary exploration, and in nuclear reactors in nuclear power plants. In addition, semiconductor design efficiency can be increased by enabling rapid modeling of electrical characteristics of a semiconductor device such as a DGA MOSFET when the channel region geometry is diversified according to design of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.