Magnetic tunnel junction structure
US8907390B2 · kind B2 · utility
2Cited by
6References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 11, 2010 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Oct 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.