Semiconductor device

US8907418B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Gerhard Noebauer · Villach, AT
• Christoph Kadow · Gauting, DE
• Donald Dibra · Munich, DE
• Robert Illing · Finkenstein, AT

Key dates

• Filing date: May 7, 2013
• Grant date: Dec 9, 2014
• Expiry date: Jun 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line.