Power inductors in silicon
US8907447B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Apr 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F27/2871
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Various methods and systems are provided for power inductors in silicon (PIiS) In one embodiment, a PIiS includes a magnetic core of magnetic material embedded in a silicon substrate, and a conductive winding having a plurality of turns, where adjacent turns of the conductive winding have a space therebetween, and where at least a portion of the magnetic core is encircled by the conductive winding In another embodiment, a DC to DC converter includes a PIiS, which includes a magnetic core of magnetic material embedded in a silicon substrate, a conductive winding having a plurality of turns, where at least a portion of the magnetic core is encircled by the conductive winding, and a cap layer of magnetic material disposed on at least one side of the silicon substrate The DC to DC converter also includes an integrated circuit mounted on the cap layer of the power inductor in silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.