Transistor with heat sink joined to only part of one electrode
US8907454B2 · kind B2 · utility
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3References
12Claims
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Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/00
Abstract
A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.