Semiconductor device and method of manufacturing the same
US8907493B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first through hole 16 and a second through hole 17 are formed which penetrate from a rear surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation film 12 is formed on the side wall of the bottom of the second through hole 17 to surround the outer circumference of the second through hole 17 having a larger opening diameter among these through holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.