Patent · US Active

Cold field electron emitters based on silicon carbide structures

US8907553B2 · kind B2 · utility

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8References

6Claims

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Assignee

The United States of America, as Represented by the Secretary of Commerce National Institute of Standards and Technology · US

Inventors

Fred Sharifi · Niskayuna, US
Myung-Gyu Kang · Gaithersburg, US
Henri J. Lezec · Strasbourg, FR

Key dates

Filing date	Aug 8, 2012
Grant date	Dec 9, 2014
Priority date	—
Expiry date	Aug 8, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/939
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.