Photo sensor, method of forming the same, and optical touch device
US8907923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2010 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Aug 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.