Method and apparatus for manufacturing silicon seed rods
US8911659B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jul 17, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | May 29, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/035
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method and apparatus for manufacturing high-purity long silicon seed rods with controlled resistivity for Siemens and similar processes with using a film of silicon dioxide, wherein a film of silicon dioxide is formed on the seed rod in the course of a reaction between a silicon melt and oxygen. The rod is formed with a quartz die and cooled by direct immersion into a cooling fluid, such as de-ionized water and/or by cooling fluid vapor in the gas cooling zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.