Photoresist composition and method of forming a metal pattern using the same
US8911926B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Apr 5, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.