Patent · US Active

Method for making photovoltaic devices using oxygenated semiconductor thin film layers

US8912037B2 · kind B2 · utility

6Cited by
3References
21Claims
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Key dates

Filing dateJul 28, 2011
Grant dateDec 16, 2014
Priority date
Expiry dateAug 14, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.