Method for making photovoltaic devices using oxygenated semiconductor thin film layers
US8912037B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.