Method for manufacturing semiconductor device and apparatus for manufacturing same
US8912060B2 · kind B2 · utility
7Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.