Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US8912083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | May 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.