Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layers
US8912089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Mar 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a stacked body on a substrate. The stacked body includes a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers. The method includes making a hole to pierce the stacked body. The method includes making a slit to divide the stacked body. The method includes making a gap between the first conductive layers by removing the second conductive layers by etching via the slit or the hole. The method includes forming a memory film including a charge storage film at a side wall of the hole. The method includes forming a channel body on an inner side of the memory film inside the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.