Method for manufacturing stretchable thin film transistor
US8912094B2 · kind B2 · utility
43Cited by
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13Claims
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Assignee
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Key dates
| Filing date | Mar 18, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.