Method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing the same
US8912134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Aug 3, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate; and at least between 0.5 and 2 min of washing time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.