Lattice matchable alloy for solar cells
US8912433B2 · kind B2 · utility
5Cited by
41References
14Claims
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Key dates
| Filing date | Jan 11, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.