Ion chamber based neutron detectors
US8912502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 30, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T3/00
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.