Electrode structure including graphene and field effect transistor having the same
US8912530B2 · kind B2 · utility
18Cited by
1References
25Claims
0Family size
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Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.