Semiconductor device, RFID tag using the same and display device
US8912537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.