Patent · US Active

Nanowires, nanowire fielde-effect transistors and fabrication method

US8912545B2 · kind B2 · utility

4Cited by

2References

14Claims

0Family size

Assignee

Semiconductor Manufacturing International Corp. · CN

Inventors

Deyuan Xiao · Shanghai, CN
James Hong · Shanghai, CN

Key dates

Filing date	Mar 15, 2013
Grant date	Dec 16, 2014
Priority date	—
Expiry date	Mar 15, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/938
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.