Semiconductor device and method of fabricating the same
US8912599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Oct 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device is provided. The semiconductor device includes a drain region, a source region, a channel region and a hybrid doped region. The drain region of a first conductivity type is located in a substrate. The source region of the first conductivity type is located in the substrate and surrounding the drain region. The channel region is located in the substrate between the source region and the drain region. The hybrid doped region includes a top doped region and a compensation doped region. The top doped region is of a second conductivity type, having a doping concentration decreased from a region near the channel region to a region near the drain region, and located in the substrate between the channel region and the drain region. The compensation doped region of the first conductivity type is located in the top doped region to compensate the top doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.