Patent · US Active

Phase change memory mask

US8913425B2 · kind B2 · utility

3Cited by
3References
23Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 12, 2013
Grant dateDec 16, 2014
Priority date
Expiry dateMar 12, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2263
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.