Selecting PA bias levels of RF PA circuitry during a multislot burst
US8913971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21157
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Power amplifier (PA) control circuitry and PA bias circuitry are disclosed. During one slot of a multislot transmit burst from radio frequency (RF) PA circuitry, the PA control circuitry selects one PA bias level of the RF PA circuitry and the RF PA circuitry has one output power level. The RF PA circuitry has a next output power level during an adjacent next slot of the multislot transmit burst. If the one output power level exceeds the next output power level by more than a power drop limit, then the PA control circuitry maintains the one PA bias level during the adjacent next slot. If the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then the PA control circuitry selects a next PA bias level, which is less than the one PA bias level, during the adjacent next slot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.