Method for manufacturing a carbon nanotube field emission device with overhanging gate
US8916394B2 · kind B2 · utility
0Cited by
12References
15Claims
0Family size
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Key dates
| Filing date | Jun 17, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jun 17, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/939
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.