Phase change memory and manufacturing method therefor
US8916413B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Oct 19, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The present invention discloses a phase change memory and a manufacturing method thereof. The phase change memory according to the present invention uses top electrodes provided on the top of storage nodes to heat the storage nodes such that a phase change layer in the storage nodes undergoes a phase change. In the phase change memory of embodiments of the present invention, the contact area between the top electrode and the storage node is relatively small, which is good for phase change. Moreover, each column of storage nodes is connected by the same linear top electrode, which can improve photo alignment shift margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.