Method of fabricating semiconductor device
US8916447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2011 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | May 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A method uses a line pattern to form a semiconductor device including asymmetrical contact arrays. The method includes forming a plurality of parallel first conductive line layers extending in a first direction on a semiconductor substrate. In this method, the semiconductor substrate may have active regions forming an oblique angle with the first direction. The method may further include forming a first mask layer and a second mask layer and using the first mask layer and the second mask layer to form a trench comprising a line area and a contact area by etching the first conductive line layers using the first mask layer and the second mask layer. The method further includes forming a gap filling layer filling the line area of the trench and forming a spacer of sidewalls of the contact area and forming a second conductive line layer electrically connected to the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.