Surface passivation of silicon based wafers

US8916768B2 · kind B2 · utility

Assignees

• REC SOLAR PTE. LTD. · SG
• UNIVERSITETET I OSLO · NO
• Institutt for Energiteknikk · NO

Inventors

• Alexander Ulyashin · Hagen, DE
• Andreas Bentzen · Oslo, NO
• Bengt Svensson · Oslo, NO
• Arve Holt · Leirsund, NO
• Erik Sauar · Oslo, NO

Key dates

• Filing date: Apr 12, 2006
• Grant date: Dec 23, 2014
• Expiry date: May 20, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.