Light-emitting device

US8916884B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shih-I Chen · Hsinchu, TW
• Wei-Yu Chen · Taichung, TW
• Yi-Ming Chen · Hsinchu, TW
• Ching-Pei Lin · Austin, US
• Tsung-Xian Lee · Hsinchu, TW

Key dates

• Filing date: Mar 28, 2013
• Grant date: Dec 23, 2014
• Expiry date: Mar 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the firs…