Patent · US Active

Optoelectronic semiconductor component

US8916886B2 · kind B2 · utility

5Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 23, 2009
Grant dateDec 23, 2014
Priority date
Expiry dateDec 31, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/882
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.