Photoelectric conversion device
US8916905B2 · kind B2 · utility
4Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2011 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jun 22, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.