Field effect transistor having double transition metal dichalcogenide channels
US8916914B2 · kind B2 · utility
13Cited by
3References
15Claims
0Family size
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Key dates
| Filing date | Jul 16, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jul 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A field effect transistor (FET) includes first and second channels stacked on a substrate, the first and second channels formed of a transition metal dichalcogenide, a source electrode and a drain electrode contacting both the first channel and the second channel, each of the source electrode and the drain electrode having one end between the first channel and the second channel, and a first gate electrode corresponding to at least one of the first channel and the second channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.