Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same
US8916915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Nov 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.