Solid-state imaging device

US8916917B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Shogo FURUYA · Takasaki, JP
• Hirofumi Yamashita · Kawasaki, JP
• Tetsuya Yamaguchi · Yokohama, JP

Key dates

• Filing date: Feb 3, 2012
• Grant date: Dec 23, 2014
• Expiry date: Oct 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.