Nonvolatile semiconductor memory
US8916923B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 2011 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, in a nonvolatile semiconductor memory in which a charge store layer is formed on a tunnel insulating film formed on a channel region of a semiconductor substrate, a first nanoparticle layer containing first conductive nanoparticles is formed on the channel side, and a second nanoparticle layer containing a plurality of second conductive nanoparticles having an average particle size larger than the first conductive nanoparticles is formed on the charge store layer side. An average energy value ΔE1 required for charging one electron in the first conductive nanoparticle is smaller than an average energy value ΔE required for charging one electron in the second conductive nanoparticle, and a difference between ΔE1 and ΔE is larger than a heat fluctuation energy (kBT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.