Patent · US Active

MOSFET having a JFET embedded as a body diode

US8916929B2 · kind B2 · utility

2Cited by
76References
8Claims
0Family size

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Key dates

Filing dateAug 16, 2011
Grant dateDec 23, 2014
Priority date—
Expiry dateAug 2, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/811

Abstract

A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.