Solid-state imaging element, method for producing solid-state imaging element, and electronic device
US8917342B2 · kind B2 · utility
11Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 5, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
Abstract
A solid-state imaging element includes a wiring layer; a charge accumulation unit including a semiconductor layer provided on the wiring layer; and a photoelectric conversion film provided on the semiconductor layer, wherein a pinning layer of a conductivity type opposite to a conductivity type of the charge accumulation unit, the pinning layer including an opening, is provided in a region of the charge accumulation unit, the region being located at an interface between the charge accumulation unit and the photoelectric conversion film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.