Body voltage sensing based short pulse reading circuit
US8917562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Nov 25, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
As memory geometries continue to scale down, current density of magnetic tunnel junctions (MTJs) make conventional low current reading scheme problematic with regard to performance and reliability. A body-voltage sense circuit (BVSC) short pulse reading (SPR) circuit is described using body connected load transistors and a novel sensing circuit with second stage amplifier which allows for very short read pulses providing much higher read margins, less sensing time, and shorter sensing current pulses. Simulation results (using 65-nm CMOS model SPICE simulations) show that our technique can achieve 550 mV of read margin at 1 ns performance under a 1 V supply voltage, which is greater than reference designs achieve at 5 ns performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.