Donor substrate and method of forming transfer pattern using the same
US8921129B2 · kind B2 · utility
4Cited by
1References
27Claims
0Family size
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Key dates
| Filing date | Oct 24, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Oct 24, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41M2205/38
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A donor substrate includes a base substrate; a light reflection layer on the base substrate and partially overlapping the base substrate; a light-to-heat conversion layer on the base substrate, and including a combination layer including an insulating material and a first metal material; and a transfer layer on the light-to-heat conversion layer. A ratio of the first metal material in the combination layer to the insulating material in the combination layer increases as a distance from the base substrate increases along a thickness direction of the light-to-heat conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.