Method of manufacturing multi-wavelengths distributed feedback (DFB) laser array including top separate confinement layer having different thickness laser units on the quantum-well layer grown by selective area epitaxial growth
US8921138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.