Method and apparatus providing multi-step deposition of thin film layer
US8921147B2 · kind B2 · utility
1Cited by
3References
47Claims
0Family size
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Key dates
| Filing date | Aug 14, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Aug 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.