Semiconductor devices with self-aligned source drain contacts and methods for making the same
US8921178B2 · kind B2 · utility
3Cited by
2References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Apr 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
Abstract
Improved formation of replacement metal gate transistors is obtained by utilizing a silicon to metal substitution reaction. After removing the dummy gate, a gate dielectric and work function metal are deposited. The work function metal is deposited to a different thickness for the P-channel transistors than for the N-channel transistors. A sacrificial polysilicon gate is then formed, which is caused to undergo substitution with a metal such as aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.