Method for selectively depositing noble metals on metal/metal nitride substrates

US8921228B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Johan Swerts · Kessel-Lo, BE
• Sven Van Elshocht · Heverlee, BE
• Annelies Delabie · Leuven, BE

Key dates

• Filing date: Oct 3, 2012
• Grant date: Dec 30, 2014
• Expiry date: Dec 9, 2032

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45536
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for forming a noble metal layer by Plasma Enhanced Atomic Layer Deposition (PE-ALD) is disclosed. The method includes providing a substrate in a PE-ALD chamber, the substrate comprising a first region having an exposed first material and a second region having an exposed second material. The first material comprises a metal nitride or a nitridable metal, and the second material comprises a non-nitridable metal or silicon oxide. The method further includes depositing selectively by PE-ALD a noble metal layer on the second region and not on the first region, by repeatedly performing a deposition cycle including (a) supplying a noble metal precursor to the PE-ALD chamber and contacting the noble metal precursor with the substrate in the presence of a carrier gas followed by purging the noble metal precursor, and (b) exposing the substrate to plasma while supplying ammonia and the carrier gas into the PE-ALD chamber.