Resistive random access memory and fabrication method thereof
US8921819B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.