Phase change memory cell with large electrode contact area

US8921820B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew J. BrightSky · Pound Ridge, US
• Chung H. Lam · Williston, US
• Jing Li · Beekman, US
• Alejandro G. Schrott · New York, US
• Norma E. Sosa Cortes · Yorktown Heights, US

Key dates

• Filing date: Dec 18, 2012
• Grant date: Dec 30, 2014
• Expiry date: Dec 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.