Oxide thin film transistor, method for fabricating TFT, array substrate for display device and method for fabricating the same
US8921850B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Dec 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
A thin film transistor (TFT), a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the same are provided. An oxide thin film transistor (TFT) includes: a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an active layer formed on the gate insulating layer above the gate electrode; an etch stop layer pattern formed on the active layer; a source alignment element and a drain alignment element formed on the etch stop layer pattern and spaced apart from one another; and a source electrode in contact with the source alignment element and the active layer and a drain electrode in contact with the drain alignment element and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.