ESD protection device and method for fabricating the same
US8921941B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | May 9, 2011 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Sep 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge (ESD) protection device includes a substrate; a source region of a first conductivity type in the substrate; a drain region of the first conductivity type in the substrate; a gate electrode overlying the substrate between the source region and the drain region; and a core pocket doping region of the second conductivity type within the drain region. The core pocket doping region does not overlap with an edge of the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.